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Hitachi arm to assist Sagar Semi arrange high-voltage semiconductor manufacturing facility

Hitachi Energy Semiconductor Machine Ltd. (HPSD), a Hitachi group firm, and Sagar Semiconductors (Sagar Semi) have inked a memorandum of understanding (MoU) to conduct joint advertising and marketing for high-power units resembling IGBTs (insulated-gate bipolar transistor) and SiC (silicon carbide), new product growth (NPD), and expertise switch of excessive voltage diode.

Kedar Reddy, Managing Director of Sagar Semiconductors, and Hirotaka Wakamatsu, Head of Enterprise Improvement for Hitachi Energy Semiconductor Units, have been current on the MoU signing.

“We’re planning to arrange a producing facility to provide high-voltage semiconductors for the automotive business. HPSD has agreed to think about a technical switch associated to the end-to-end manufacture of those high-voltage units,” a senior Sagar Semi official stated.

In addition to vetting the undertaking plan, HPSD will assist the Hyderabad-based firm prepare its workers in India and Japan. The power may have the capability to provide 100 million models a 12 months.

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“The proposed manufacturing facility will embody each the fabrication and packaging of those units. This could be one in every of India’s first end-to-end (each front-end and back-end) built-in semiconductor factories,” he stated.

The 2 corporations will work on creating options tailor-made for rising applied sciences in India, specializing in sectors resembling white items, vitality storage options, and railways.

“This collaboration is envisaged to strengthen India’s semiconductor and energy electronics ecosystem by fostering indigenous manufacturing capabilities, talent growth, and advancing technological prowess by means of new product growth,”  Kedar Reddy, Managing Director of Sagar Semi, stated.

“The 2 corporations will discover varied initiatives for the Indian market,” Hirotaka Wakamatsu stated.



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